Future smartphones are about to get a lot more storage thanks to Samsung, which announced this week that it has started mass-producing “the industry’s first three-dimensional (3D) Vertical NAND (V-NAND) flash memory, which breaks through the current scaling limit for existing NAND flash technology.” As 9to5Google notes, this breakthrough could pave the way for single smartphone chips that have up to 384GB of storage since Samsung is essentially stacking “up to 24 layers of 16GB storage on top of each other in a chip not much thicker than existing ones.” Samsung’s full press release follows below.
Read more
Read more
Comments
Post a Comment